Gallium Nitride HEMT Epiwafer

Gallium nitride (GaN) is used as the wide band gap material for next generation power semiconductors and high frequency devices. We achieved high voltage resistance and good flatness on the Gallium Nitride HEMT Epiwafers using our proprietary buffer layers. (GaN on Si HEMT Epiwafers)

We are also engaged in the development of p-GaN cap layers and AlGaN DH structure for the realization of normally-off HEMT Epiwafers.

We also handle GaN Epiwafers on silicon carbide (SiC) and sapphire and AIN templates for high-quality LED (on sapphire wafer). 
 

Applications (GaN on Si HEMT Epiwafer)

For power semiconductors: Inverter and AC-DC converter

For high-frequency devices: For mobile phone base stations

Inverter for air conditioner etc. For high frequency devices such as mobile phone base stations

Vertical/Horizontal leak current

Notes

- Recommended use: Power switching device

- The values and characteristics shown here are typical values.

- We will adjust the structure and characteristics on request.

- We can meet your requests for the p-GaN cap layer and AlGaN buffer structure.

Product characteristics (AIN template)

Substrate: c-plane sapphire Crystal Structure of AlN Epitaxial Layer: wurtzite Diameter: 50.8 mm ± 0.25 mm (typical) Thickness of Substrate: 430 μm ± 25 μm (typical) Thickness of AlN Epitaxial Layer: 1 μm ± 0.3 μm (typical) Surface: c-plane AlN, as grown effective area < 40 mmΦ (typical) no cracks by a visual inspection. Backside: rough FWHM of X-ray ω-scan rocking curve: < 150 arcsec for (0002) (typical) Conductivity: insulating Packing: packaged fluoroware container and vacuum-packed.