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InGaAs PIN Photodiode

3_IMG_0371_01.jpg InGaAs PIN photodiode is a photosensitive device designed to detect near-infrared light. Our photodiode is capable of detecting wavelengths in the 900 nm to 1700 nm range.
 Low dark current and high sensitivity are the key strengths of our photodiode. They are suitable for a wide range of applications including wearable devices, spectroscopy, industrial measurement, and medical equipment.




Part No. Characteristics Dimensions
Spectral response range
λ[μm]
Peak sensitivity wavelength
λp[μm]
Photo
sensitivity
R[A/W]
λ=1.55μm
Dark current
ID[nA]
VR=5V
Chip
Size
[μm]
Chip
Thickness
[μm]
Detection
area
[μm]
H15CAR 0.9 ~ 1.7 1.55 1 0.12 350*350 150 φ200
H15AAR 0.9 ~ 1.7 1.55 1 0.15 470*470 150 φ300
H15BAR 0.9 ~ 1.7 1.55 1 0.2 600*600 150 φ430

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