Gallium Arsenide Wafer

 

Our Gallium Arsenide Wafers are used in a wide range of fields including electronics devices such as laser applications for DVD, LED, and mobile phones.

Applications

The wafers are used in high-output LDs, VCSEL, micro LEDs and display LEDs.

Product features

VGF and LEC methods are used to develop single crystals.

The wafers are characterized by highly controlled carrier density and low EPD.

Product characteristics

 

VGF

		VGF-n type, LD grade				VGF-n type, LED grade
Crystal growth method		VGF (vertical gradient freezing) method				VGF (vertical gradient freezing) method
Dopant and conductive type		N type: Si-doped				N type: Si-doped
Carrier density		N-type (0.4-4)E18 cm-3 (Adjustable within the above range)				N-type (0.4-4)E18 cm-3 (Adjustable within the above range)
Dislocation density(EPD)	(cm-2)	EPDave≤200(LD) EPDmax≤2,000(LD)				EPDave≤500(LED) EPDmax≤5,000(LED)
Size		6-inch	4-inch	3-inch	2-inch	6-inch	4-inch	3-inch	2-inch
Plane orientation		1. (100)0°～15°off±0.3 2. We will aim to meet your requests.				1. (100)0°～15°off±0.3 2. We will aim to meet your requests.
Diameter	(mm)	150.0±0.3	100.0±0.3	76.0±0.3 76.2±0.3	50.0±0.3 50.8±0.3	150.0±0.3	100.0±0.3	76.0±0.3 76.2±0.3	50.0±0.3 50.8±0.3
Thickness	(μm)	625/675 ±25	450/625 ±25	350/450 ±25	350/450 ±25	625/675 ±25	450/625 ±25	350/450 ±25	350/450 ±25
Orientation flat length	OF(mm) IF(mm)	48.0±1.0 30.0±1.0	32.5±1.0 18.0±1.0	22.0±1.0 12.0±1.0	16.0±1.0 8.0±1.0	48.0±1.0 30.0±1.0	32.0±1.0 18.0±1.0	22.0±1.0 12.0±1.0	16.0±1.0 8.0±1.0
		(Adjustable upon request)				(Adjustable upon request)
Orientation flat direction	OF Position IF Position	EJ (Dove-Tail)：[OF] (0-1-1)±0.05°/ [IF](0-11)±0.5° or SEMI US (V-Groove)：[OF] (01-1)±0.05°/ [IF](011)±0.5° (Adaptable to both cleavage and bevel)				EJ (Dove-Tail)：[OF] (0-1-1)±0.5°/ [IF](0-11)±0.5° or SEMI US (V-Groove)：[OF] (01-1)±0.5°/ [IF](011)±0.5°
Notch		OK	Not allowed	Not allowed	Not allowed	OK	Not allowed	Not allowed	Not allowed
Edge rounding		Beveled				Beveled
Metalworking precision	TTV(μm)	≤10.0	≤10.0	≤10.0	≤10.0(TV)	≤10.0	≤10.0	≤10.0	≤10.0(TV)
	Warp(μm)	≤10.0	≤10.0	≤10.0	≤10.0	≤15.0	≤15.0	≤15.0	≤15.0
Surfacing	Surface	Mirror				Mirror
	Back	Post-lap etching (mirror processing is also available)				Post-lap etching (mirror processing is also available)
Surface processing		Epi-ready				Epi-ready
Laser mark		Option				Option
Packaging form		Cassette	Cassette or individual packaging tray			Cassette	Cassette or individual packaging tray

VGF-p type

		VGF-p type Zn-doped		VGF-p type Zn- and Si-doped
Carrier density		VGF (vertical gradient freezing) method		VGF (vertical gradient freezing) method
Dopant and conductive type		P type: Zn-doped		P type: Zn- and Si-doped
Carrier density		P-type (0.5-3)E19 cm-3 (Adjustable within the above range)		P-type (0.5-3)E19 cm-3 (Adjustable within the above range)
Dislocation density (EPD)	(cm-2)	EPDave</=3,000 EPDmax</=10,000		EPDave</=1,500 EPDmax</=10,000
Size		4-inch	2-inch	4-inch	2-inch
Plane orientation		1. (100)0°/2°off±0.3 2. We will aim to meet your requests.		1. (100)0°/2°off±0.3 2. We will aim to meet your requests.
Diameter	(mm)	100.0±0.3	50.0±0.3 50.8±0.3	100.0±0.3	50.0±0.3 50.8±0.3
Thickness	(μm)	450/625 ±25	350/450 ±25	450/625 ±25	350/450 ±25
Orientation flat length	OF(mm) IF(mm)	32.5±1.0 18.0±1.0	16.0±1.0 8.0±1.0	32.5±1.0 18.0±1.0	16.0±1.0 8.0±1.0
		(Adjustable upon request)		(Adjustable upon request)
Orientation flat direction	OF(mm) IF(mm)	EJ (Dove-Tail)：[OF] (0-1-1)±0.05°/ [IF](0-11)±0.5° or SEMI US (V-Groove)：[OF] (01-1)±0.05°/ [IF](011)±0.5° (Adaptable to both cleavage and bevel)		EJ (Dove-Tail)：[OF] (0-1-1)±0.05°/ [IF](0-11)±0.5° or SEMI US (V-Groove)：[OF] (01-1)±0.05°/ [IF](011)±0.5° (Adaptable to both cleavage and bevel)
Edge rounding		Beveled		Beveled
Metalworking precision	TTV(μm)	≤10.0	≤10.0(TV)	≤10.0	≤10.0(TV)
	Warp(μm)	≤10.0	≤10.0	≤10.0	≤10.0
Surfacing	Surface	Mirror		Mirror
	Back	Post-lap etching (mirror processing is also available)		Post-lap etching (mirror processing is also available)
Surface processing		Epi-ready		Epi-ready
Laser mark		Option		Option
Packaging form		Cassette or individual packaging tray		Cassette or individual packaging tray

Semi-insulating properties

		VGF semi-insulating properties		LEC semi-insulating properties
Carrier density		VGF (vertical gradient freezing) method		LEC (Liquid Encapsulated Czochralski) method
Dopant and conductive type		Semi-insulating properties: Undoped (C-doped)		Semi-insulating properties: Undoped (C-doped)
Resistivity	(at 22℃)(Ω cm)	≧1E7 (Adjustable within the above range)		≧1E7 (Adjustable within the above range)
Dislocation density (EPD)	(cm-2)	EPDave≤5000		EPDave≤105
Size		4-inch	3-inch	4-inch	3-inch
Plane orientation		1. (100)0°/2°off±0.3 2. We will aim to meet your requests.		1. (100)0°/2°off±0.3 2. We will aim to meet your requests.
Diameter	(mm)	100.0±0.3	76.0±0.3 76.2±0.3	100.0±0.3	76.0±0.3 76.2±0.3
Thickness	(μm)	450/625 ±25	350/450 ±25	450/625 ±25	350/450 ±25
Orientation flat length	OF(mm) IF(mm)	32.5±1.0 18.0±1.0	22.0±1.0 12.0±1.0	32.5±1.0 18.0±1.0	22.0±1.0 12.0±1.0
		(Adjustable upon request)		(Adjustable upon request)
Orientation flat direction	OF Position IF Position	EJ (Dove-Tail)：[OF] (0-1-1)±0.5°/ [IF](0-11)±0.5° or SEMI US (V-Groove)：[OF] (01-1)±0.5°/ [IF](011)±0.5°		EJ (Dove-Tail)：[OF] (0-1-1)±0.5°/ [IF](0-11)±0.5° or SEMI US (V-Groove)：[OF] (01-1)±0.5°/ [IF](011)±0.5°
Edge rounding		Beveled		Beveled
Metalworking precision	TTV(μm)	≤10.0	≤10.0	≤10.0	≤10.0
Metalworking precision	TIR(μm)	≤5.0	≤5.0	≤5.0	≤5.0
Metalworking precision	Warp(μm)	≤10.0	≤10.0	≤10.0	≤10.0
Surfacing	Surface	Mirror		Mirror
	Back	Post-lap etching (mirror processing is also available)		Post-lap etching (mirror processing is also available)
Surface processing		Epi-ready		Epi-ready
Laser mark		Option		Option
Packaging form		Cassette or individual packaging tray		Cassette or individual packaging tray