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  4. 砷化镓基板

砷化镓基板

 

本公司的砷化镓基板大量应用于DVD等激光设备以及LED、手机等电子设备,用途广泛。sc_index_thumb_02.jpg



用途
应用于大功率LD、VCSEL、Micro LED及显示屏LED基板。
  02_semi_app_1.jpg
产品特点
通过VGF法和LEC法培养单晶。
拥有高度控制载流子浓度、低EPD等特点。
产品特性
 
VGF
  VGF-n 型, LD grade VGF-n 型, LED grade
Crystal growth method VGF (vertical gradient freezing) method VGF (vertical gradient freezing) method
Dopant and conductive type N type: Si-doped N type: Si-doped
Carrier density N-type (0.4-4)E18 cm-3
(Adjustable within the above range)
N-type (0.4-4)E18 cm-3
(Adjustable within the above range)
Dislocation density(EPD) (cm-2) EPDave≤200(LD)
EPDmax≤2,000(LD)
EPDave≤500(LED)
EPDmax≤5,000(LED)
Size 6-inch 4-inch 3-inch 2-inch 6-inch 4-inch 3-inch 2-inch
Plane orientation 1. (100)0 °~15 °off±0.3
2. We will aim to meet your requests.
1. (100)0 °~15 °off±0.3
2. We will aim to meet your requests.
Diameter (mm) 150.0±0.3 100.0±0.3 76.0±0.3
76.2±0.3
50.0±0.3
50.8±0.3
150.0±0.3 100.0±0.3 76.0±0.3
76.2±0.3
50.0±0.3
50.8±0.3
Thickness (μm) 625/675
±25
450/625
±25
350/450
±25
350/450
±25
625/675
±25
450/625
±25
350/450
±25
350/450
±25
Orientation flat length OF(mm)
IF(mm)
48.0±1.0
30.0±1.0
32.5±1.0
18.0±1.0
22.0±1.0
12.0±1.0
16.0±1.0
8.0±1.0
48.0±1.0
30.0±1.0
32.0±1.0
18.0±1.0
22.0±1.0
12.0±1.0
16.0±1.0
8.0±1.0
(Adjustable upon request) (Adjustable upon request)
Orientation flat direction OF Position
IF Position
EJ (Dove-Tail):[OF] (0-1-1)±0.05 °/ [IF](0-11)±0.5 °
or
SEMI US (V-Groove):[OF] (01-1)±0.05 °/ [IF](011)±0.5 °
(Adaptable to both cleavage and bevel)
EJ (Dove-Tail):[OF] (0-1-1)±0.5 °/ [IF](0-11)±0.5 °
or
SEMI US (V-Groove):[OF] (01-1)±0.5 °/ [IF](011)±0.5 °
Notch OK Not allowed Not allowed Not allowed OK Not allowed Not allowed Not allowed
Edge rounding Beveled Beveled
Metalworking precision TTV(μm) ≤10.0 ≤10.0 ≤10.0 ≤10.0(TV) ≤10.0 ≤10.0 ≤10.0 ≤10.0(TV)
Metalworking precision Warp(μm) ≤10.0 ≤10.0 ≤10.0 ≤10.0 ≤15.0 ≤15.0 ≤15.0 ≤15.0
Surfacing Surface Mirror Mirror
Surfacing Back Post-lap etching (mirror processing is also available) Post-lap etching (mirror processing is also available)
Surface processing Epi-ready Epi-ready
Laser mark Option Option
Packaging form Cassette Cassette or individual packaging tray Cassette Cassette or individual packaging tray

 

 VGF-p型
  VGF-p型 Zn-doped VGF-p型 Zn- and Si-doped
Carrier density VGF (vertical gradient freezing) method VGF (vertical gradient freezing) method
Dopant and conductive type P type: Zn-doped P type: Zn- and Si-doped
Carrier density P-type (0.5-3)E19 cm-3
(Adjustable within the above range)
P-type (0.5-3)E19 cm-3
(Adjustable within the above range)
Dislocation density (EPD) (cm-2) EPDave</=3,000
EPDmax</=10,000
EPDave</=1,500
EPDmax</=10,000
Size 4-inch 2-inch 4-inch 2-inch
Plane orientation 1. (100)0 °/2 °off±0.3
2. We will aim to meet your requests.
1. (100)0 °/2 °off±0.3
2. We will aim to meet your requests.
Diameter (mm) 100.0±0.3 50.0±0.3
50.8±0.3
100.0±0.3 50.0±0.3
50.8±0.3
Thickness (μm) 450/625
±25
350/450
±25
450/625
±25
350/450
±25
Orientation flat length OF(mm)
IF(mm)
32.5±1.0
18.0±1.0
16.0±1.0
8.0±1.0
32.5±1.0
18.0±1.0
16.0±1.0
8.0±1.0
(Adjustable upon request) (Adjustable upon request)
Orientation flat direction OF(mm)
IF(mm)
EJ (Dove-Tail):[OF] (0-1-1)±0.05 °/ [IF](0-11)±0.5 °
or
SEMI US (V-Groove):[OF] (01-1)±0.05 °/ [IF](011)±0.5 °
(Adaptable to both cleavage and bevel)
EJ (Dove-Tail):[OF] (0-1-1)±0.05 °/ [IF](0-11)±0.5 °
or
SEMI US (V-Groove):[OF] (01-1)±0.05 °/ [IF](011)±0.5 °
(Adaptable to both cleavage and bevel)
Edge rounding Beveled Beveled
Metalworking precision TTV(μm) ≤10.0 ≤10.0(TV) ≤10.0 ≤10.0(TV)
Warp(μm) ≤10.0 ≤10.0 ≤10.0 ≤10.0
Surfacing Surface Mirror Mirror
Back Post-lap etching (mirror processing is also available) Post-lap etching (mirror processing is also available)
Surface processing Epi-ready Epi-ready
Laser mark Option Option
Packaging form Cassette or individual packaging tray Cassette or individual packaging tray
 半绝缘性能
  VGF 半绝缘性能 LEC 半绝缘性能
Carrier density VGF (vertical gradient freezing) method LEC (Liquid Encapsulated Czochralski) method
Dopant and conductive type 半绝缘性能: Undoped (C-doped) 半绝缘性能: Undoped (C-doped)
Resistivity (at 22℃)(Ω cm) ≧1E7
(Adjustable within the above range)
≧1E7
(Adjustable within the above range)
Dislocation density (EPD) (cm-2) EPDave≤5000 EPDave≤10^5
Size 4-inch 3-inch 4-inch 3-inch
Plane orientation 1. (100)0 °/2 °off±0.3
2. We will aim to meet your requests.
1. (100)0 °/2 °off±0.3
2. We will aim to meet your requests.
Diameter (mm) 100.0±0.3 76.0±0.3
76.2±0.3
100.0±0.3 76.0±0.3
76.2±0.3
Thickness (μm) 450/625
±25
350/450
±25
450/625
±25
350/450
±25
Orientation flat length OF(mm)
IF(mm)
32.5±1.0
18.0±1.0
22.0±1.0
12.0±1.0
32.5±1.0
18.0±1.0
22.0±1.0
12.0±1.0
(Adjustable upon request) (Adjustable upon request)
Orientation flat direction OF Position
IF Position
EJ (Dove-Tail):[OF] (0-1-1)±0.5 °/ [IF](0-11)±0.5 °
or
SEMI US (V-Groove):[OF] (01-1)±0.5 °/ [IF](011)±0.5 °
EJ (Dove-Tail):[OF] (0-1-1)±0.5 °/ [IF](0-11)±0.5 °
or
SEMI US (V-Groove):[OF] (01-1)±0.5 °/ [IF](011)±0.5 °
Edge rounding Beveled Beveled
Metalworking precision TTV(μm) ≤10.0 ≤10.0 ≤10.0 ≤10.0
TIR(μm) ≤5.0 ≤5.0 ≤5.0 ≤5.0
Warp(μm) ≤10.0 ≤10.0 ≤10.0 ≤10.0
Surfacing Surface Mirror Mirror
Back Post-lap etching (mirror processing is also available) Post-lap etching (mirror processing is also available)
Surface processing Epi-ready Epi-ready
Laser mark Option Option
Packaging form Cassette or individual packaging tray Cassette or individual packaging tray

联系我们

日本(总公司) +81 3-6847-1253
中国 +86 755-2160-7358
美国 +1 408-236-7560
欧洲 +49 911-56989-3203